Home Power management Power stages Gallium nitride (GaN) power stages

LMG3422R030

ACTIVE

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Product details

VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RQZ) 54 144 mm² 12 x 12
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

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Technical documentation

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Type Title Date
* Data sheet LMG342xR030 600 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. F) PDF | HTML 27 Aug 2024
Technical article EV 온보드 충전기용 CLLLC와 DAB 비교 PDF | HTML 22 Mar 2024
Technical article EV 車載充電器 CLLLC vs. DAB PDF | HTML 20 Mar 2024
Technical article CLLLC vs. DAB for EV onboard chargers PDF | HTML 21 Dec 2023
Technical article Managing thermals: 3 ways to break through power-density barriers PDF | HTML 16 Oct 2022
Technical article Meeting the power demands of evolving robot system architectures PDF | HTML 13 Oct 2021
White paper Achieving GaN Products With Lifetime Reliability PDF | HTML 02 Jun 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU,實現功率密集與有效率的數位電源系統 18 Mar 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
Application note Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A) PDF | HTML 19 Nov 2020
Technical article How GaN FETs with integrated drivers and self-protection will enable the next gene PDF | HTML 17 Nov 2020
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET 20 Oct 2020
Analog Design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG342X-BB-EVM — LMG342x evaluation module

The LMG342X-BB-EVM is an easy-to-use breakout board to configure any LMG342xR0x0 half-bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry, this evaluation module (EVM) allows for quick measurements of the gallium (...)

User guide: PDF | HTML
Not available on TI.com
Daughter card

LMG3422EVM-043 — LMG3422R030 600-V 30-mΩ half-bridge daughter card

LMG3422EVM-043 configures two LMG3422R030 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
User guide: PDF | HTML
Not available on TI.com
Simulation model

LMG3422R030 PSpice Model

SNOM767.ZIP (270 KB) - PSpice Model
Simulation model

LMG3422R030 Unencrypted PSpice Model Package

SNOM704.ZIP (12 KB) - PSpice Model
CAD/CAE symbol

LMG3422R030 Step File

SNOR031.ZIP (410 KB)
Calculation tool

LMGXX-GAN-LLC-CALC GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG2100R026 100V 2.6mΩ half-bridge gallium nitride (GaN) power stage LMG2100R044 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG2650 650V 95mΩ GaN half-bridge with integrated driver, protection and current sense LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3426R030 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3427R030 600V 30mΩ GaN FET with integrated driver, protection and zero-current detection LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R050 650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3526R050 650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting LMG5200 80V GaN Half Bridge Power Stage
Calculation tool

SNOR029 GaN CCM Boost PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Calculation tool

SNOR030 GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Reference designs

PMP23338 — 3.6kW single-phase totem-pole bridgeless PFC reference design with e-meter functionality

This reference design is a Gallium nitride (GaN) based, 3.6kW, single-phase continuous conduction mode (CCM) totem-pole bridgeless power factor correction (PFC) converter, targeting M-CRPS power supply. This design includes e-meter functionality with 0.5% accuracy, eliminating the need for (...)
Test report: PDF
Reference designs

TIDA-010255 — 230VAC, 2kW three-phase GaN inverter reference design for robotics and servo drives

This reference design demonstrates a high-efficiency 320-VDC input, three-phase power stage using six fast switching GaN-FETs with integrated driver, protection and temperature reporting with hot-side microcontroller control, especially for motor-integrated servo drives and robotics applications. (...)
Design guide: PDF
Reference designs

TIDA-010210 — 11-kW, bidirectional, three-phase ANPC based on GaN reference design

This reference design provides a design template for implementing a three-level, three-phase, gallium nitride (GaN) based ANPC inverter power stage. The use of fast switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter (...)
Design guide: PDF
Schematic: PDF
Reference designs

TIDA-010203 — 4-kW single-phase totem pole PFC reference design with C2000 and GaN

This reference design is a 4-kW CCM totem-pole PFC with F280049/F280025 control card and LMG342x EVM board. This design demos a robust PFC solution, which avoids isolated current sense by putting the controller's ground in the middle of a MOSFET leg. Benefitting from non-isolation, AC current (...)
Design guide: PDF
Schematic: PDF
Package Pins CAD symbols, footprints & 3D models
VQFN (RQZ) 54 Ultra Librarian

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