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LMG3425R050

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600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

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Data sheet

LMG3425R050

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 600 RDS(on) (mΩ) 50 ID (max) (A) 44 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Ideal diode mode, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 50 ID (max) (A) 44 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Ideal diode mode, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RQZ) 54 144 mm² 12 x 12
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 3.6MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 3.6MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses

The LMG3425R050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3425R050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.

The LMG3425R050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3425R050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.
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Type Title Date
* Data sheet LMG3425R050 600 V 50 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet PDF | HTML 08 Mar 2024
White paper Achieving GaN Products With Lifetime Reliability PDF | HTML 02 Jun 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 18 Mar 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
Application note Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A) PDF | HTML 19 Nov 2020
Technical article How GaN FETs with integrated drivers and self-protection will enable the next gene PDF | HTML 17 Nov 2020
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET 20 Oct 2020
Analog Design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG342X-BB-EVM — LMG342x evaluation module

The LMG342X-BB-EVM is an easy-to-use breakout board to configure any LMG342xR0x0 half-bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry, this evaluation module (EVM) allows for quick measurements of the gallium (...)

User guide: PDF | HTML
Not available on TI.com
Daughter card

LMG3425EVM-041 — LMG3425R050 600-V 50-mΩ with ideal diode mode half-bridge daughter card

LMG3425EVM-041 configures two LMG3425R050 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
User guide: PDF | HTML
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Simulation model

LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model

SNOM768.ZIP (340 KB) - PLECS model
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Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
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