Home Power management Power stages Gallium nitride (GaN) power stages
Home
Power management
Power stages
Gallium nitride (GaN) power stages
NEW

LMG3426R030

ACTIVE

600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection

Order now
Data sheet

LMG3426R030

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Zero voltage detection Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 600 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Zero voltage detection Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RQZ) 54 144 mm² 12 x 12
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2.2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • LMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters
    • LMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.

filter Find other Gallium nitride (GaN) power stages
Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 1
Type Title Date
* Data sheet LMG342xR030 600 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. F) PDF | HTML 27 Aug 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG342X-BB-EVM — LMG342x evaluation module

The LMG342X-BB-EVM is an easy-to-use breakout board to configure any LMG342xR0x0 half-bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry, this evaluation module (EVM) allows for quick measurements of the gallium (...)

User guide: PDF | HTML
Not available on TI.com
Daughter card

LMG3422EVM-043 — LMG3422R030 600-V 30-mΩ half-bridge daughter card

LMG3422EVM-043 configures two LMG3422R030 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
User guide: PDF | HTML
Not available on TI.com
Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG2100R026 — 100V 2.6mΩ half-bridge gallium nitride (GaN) power stage LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG2650 — 650V 95mΩ GaN half-bridge with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3426R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 — 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3427R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-current detection LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3526R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting LMG5200 — 80V GaN Half Bridge Power Stage
Download
Package Pins CAD symbols, footprints & 3D models
VQFN (RQZ) 54 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Support & training

TI E2E™ forums with technical support from TI engineers

View all forum topics

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos