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LMG3422EVM-043

LMG3422R030 600-V 30-mΩ half-bridge daughter card

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LMG3422EVM-043

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Overview

LMG3422EVM-043 configures two LMG3422R030 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

Features
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG342XR0XX
  • Single/Dual PWM input on board for PWM signal with variable dead time
  • Cycle-by-cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) power stages
LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3426R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 — 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3427R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-current detection
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Evaluating LMG3422R030 GaN FET power stage

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Daughter card

LMG3422EVM-043 — LMG3422R030 600-V 30-mΩ half-bridge daughter card

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Technical documentation

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Type Title Date
* User guide LMG342XEVM-04X User Guide (Rev. B) PDF | HTML 30 Jan 2022
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 18 Mar 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
Certificate LMG3422EVM-043 EU Declaration of Conformity (DoC) 26 Oct 2020

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