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UCC21710

ACTIVE

5.7kVrms ±10A, single-channel-isolated gate driver with OC detection, internal clamp for IGBT/SiC

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Data sheet

UCC21710

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 800 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 800 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kV RMS single channel isolated gate driver
  • Drives SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kV RMS single channel isolated gate driver
  • Drives SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 component recognition program

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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UCC21732 ACTIVE 5.7kVrms, ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiC FETs Supports external Miller clamp; supports two-level Soft Turn-OFF
UCC21750 ACTIVE 5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs Supports overcurrent protection

Technical documentation

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Type Title Date
* Data sheet UCC21710 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. B) PDF | HTML 05 May 2023
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
Technical article How silicon carbide helps maximize efficiency in renewable energy systems PDF | HTML 04 Jan 2024
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 Sep 2023
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 07 Jun 2023
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Certificate FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance 26 Oct 2021
Application note Performance of the Analog PWM Channel in Smart Gate Drivers 16 Jan 2020
Technical article Designing highly efficient, powerful and fast EV charging stations PDF | HTML 06 Aug 2019
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 30 Jan 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21710QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules

The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
User guide: PDF
Not available on TI.com
Evaluation board

UCC21710QDWEVM-054 — UCC21710 evaluation module for Wolfspeed® 1200-V SiC platforms

The UCC21710QDWEVM-054 is a compact half-bridge gate driver evaluation module consisting of two single-channel isolated gate drivers. This evaluation module provides supply voltage, drive, protection and monitoring needed for driving several different models (...)

User guide: PDF
Not available on TI.com
Simulation model

UCC21710 PSpice Transient Model

SLUM679.ZIP (89 KB) - PSpice Model
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Simulation model

UCC21710 Unencrypted PSpice Transient Model

SLUM716.ZIP (6 KB) - PSpice Model
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Design tool

SLURAZ2 — UCC217xxEVM Design Files

Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21710 — 5.7kVrms ±10A, single-channel-isolated gate driver with OC detection, internal clamp for IGBT/SiC
Hardware development
Evaluation board
UCC21710QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules UCC21732QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules UCC21750QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

TIDA-01606 — 10-kW, bidirectional three-phase three-level (T-type) inverter and PFC reference design

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC T-type inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching (...)
Design guide: PDF
Schematic: PDF
Reference designs

PMP23223 — Smart isolated gate driver with bias supply reference design

This reference design demonstrates the combination of UCC21732 gate driver with a UCC14xxx series bias supply. This design can be used to drive a variety of power switches, including connecting directly to a Wolfspeed Silicon Carbide (SiC) field-effect transistor (FET) module. This reference design (...)
Test report: PDF
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SOIC (DW) 16 Ultra Librarian
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