This reference design describes a 3.5kW highvoltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller size transformer. To ease the thermal performance of active clamping metal-oxide semiconductor fieldeffect transistors (MOSFETs), the converter uses twochannel active clamping circuits.
| Output voltage options | PMP41078.1 |
|---|---|
| Vin (Min) (V) | 200 |
| Vin (Max) (V) | 450 |
| Vout (Nom) (V) | 14 |
| Iout (Max) (A) | 250 |
| Output Power (W) | 3500 |
| Isolated/Non-Isolated | Isolated |
| Input Type | DC |
| Topology | Full Bridge- Phase Shifted |
A fully assembled board has been developed for testing and performance validation only, and is not available for sale.
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Test results for the reference design, including efficiency graphs, test prerequisites and more
Detailed schematic diagram for design layout and components
Complete listing of design components, reference designators, and manufacturers/part numbers
Detailed overview of design layout for component placement
Design file that contains information on physical board layer of design PCB
PCB layer plot file used for generating PCB design layout
Includes TI products in the design and potential alternatives.
| Type | Title | Date | ||
|---|---|---|---|---|
| Test report | High-Voltage to Low-Voltage DC-DC Converter Reference Design With GaN HEMT | PDF | HTML | Aug. 27, 2024 |
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