Driver or library
UCC5881-DESIGN — UCC5881-Q1 design resources
This repository contains the datasheet and supporting documents for the UCC5881-Q1 device
UCC5881-Q1
Automotive, 20A, real-time variable IGBT/SiC MOSFET isolated gate driver with advanced protection
Data sheet
UCC5881-Q1
- Dual-output driver with real time variable drive strength
- ±15A and ±5A drive current outputs
- Digital input pins (GD*) for drive strength adjustment without SPI
- 3 resistor settings R1, R2, or R1||R2
- Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
- Primary-side and secondary-side active short circuit (ASC) support
- Under-voltage and over-voltage protection on internal and external supplies
- Driver die temperature sensing and over temperature protection
- Short-circuit protection:
- 110ns response time to DESAT event
- DESAT protection – selections up to 14V
- Shunt resistor based short-circuit (SC) and over-current (OC) protection
- Configurable protection threshold values and blanking times
- Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
- Integrated 10-bit ADC
- Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
- Programmable digital comparators
- Advanced VCE/VDS clamping circuit
- Functional Safety-Compliant
- Developed for functional safety applications
- Documentation available to aid ISO 26262 system design up to ASIL D
- Integrated diagnostics:
- Built in self-test (BIST) for protection comparators
- Gate threshold voltage measurement for power device health monitoring
- INP to transistor gate path integrity
- Internal clock monitoring
- Fault alarm and warning outputs (nFLT*)
- ISO communication data integrity check
- SPI based device reconfiguration, verification, supervision, and diagnosis
- 150V/ns CMTI
- AEC-Q100 qualified with the following results:
- Device temperature grade 1: -40°C to +125°C ambient operating temperature
- Device HBM ESD classification level 2
- Device CDM ESD classification level C2b
The UCC5881-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.
Request more information
The full data sheet, functional safety documentation and other information are available. Request now
The UCC588x-Q1 complex device driver software is available. Request now
Technical documentation
No results found. Please clear your search and try again.
View all 18 Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Evaluation board
UCC5880INVERTEREVM — UCC5880-Q1 evaluation module for variable isolated gate drive in traction inverters
The UCC5880INVERTEREVM board can be used standalone to test the UCC5880-Q1 driver with 100-nF capacitor load soldered on the board, or it can also be used to drive Wolfspeed XM3 SiC-based half-bridge power modules directly for high-power test. Two UCC14240-Q1 isolated bias supplies are included on (...)
Evaluation board
UCC5880QEVM-057 — UCC5880-Q1 evaluation module
The UCC5880-Q1 evaluation module is designed for evaluation of the UCC5880-Q1, a 20A isolated single-channel gate driver with adjustable gate drive strength and advanced protection functions. This gate driver is targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. UCC5880-Q1 (...)
Simulation tool
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs
TIDM-02014 — High-power, high-performance automotive SiC traction inverter reference design
TIDM-02014 is a 800-V, 300kW SiC-based traction inverter system reference design developed by Texas Instruments and Wolfspeed provides a foundation for OEMs and design engineers to create high-performance, high-efficiency traction inverter systems and get to market faster. This solution (...)
Design guide: PDF
Reference designs
PMP31236 — Gate driver reference design for HybridPACK™ Drive IGBT modules
This reference uses six UCC5880-Q1 gate-drive ICs and six LM5180-Q1 isolated bias supplies to interface with and drive Infineon HybridPACK™ insulated-gate bipolar transistor (IGBT) modules. The isolated output voltage is +15 V and −8 V with 100-mA maximum output current each. The input voltage (...)
Test report: PDF
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SSOP (DFC) | 32 | Ultra Librarian |
Ordering & quality
Information included:
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Information included:
- Fab location
- Assembly location
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.