UCC27423-EP
Enhanced Product 4-A/4-A dual-channel gate driver with inverting inputs
UCC27423-EP
- Industry-Standard Pinout
- Enable Functions for Each Driver
- High Current-Drive Capability of ±4 A
- Unique Bipolar and CMOS True-Drive Output
Stage Provides High Current at MOSFET Miller
Thresholds - TTL-/CMOS-Compatible Inputs Independent of
Supply Voltage - 20-ns Typical Rise and 15-ns Typical Fall Times
With 1.8-nF Load - Typical Propagation Delay Times of 25 ns
With Input Falling and 35 ns With Input Rising - 4.5-V to 15-V Supply Voltage
- Dual Outputs can be Paralleled for Higher Drive
Current - Available in Thermally-Enhanced MSOP
PowerPAD™ Package With 4.7°C/W RθJC - Supports Defense, Aerospace, and Medical
Applications- Controlled Baseline
- One Assembly/Test Site
- One Fabrication Site
- Extended Product Life Cycle
- Extended Product-Change Notification
- Product Traceability
- APPLICATIONS
- Switch-Mode Power Supplies
- DC/DC Converters
- Motor Controllers
- Line Drivers
- Class-D Switching Amplifiers
All other trademarks are the property of their respective owners
The UCC27423 and UCC27424 high-speed MOSFET drivers can deliver large peak currents into capacitive loads. Two standard logic options are offered – dual inverting and dual noninverting drivers. The UCC27424 thermally-enhanced 8-pin PowerPAD™ MSOP package (DGN) drastically lowers the thermal resistance to improve long-term reliability. The UCC27423 is offered in a standard SOIC-8 (D) package.
Using a design that inherently minimizes shoot-through current, this driver delivers 4 A of current where it is needed most – at the Miller plateau region during the MOSFET switching transition. A unique bipolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages.
The UCC27423 and UCC27424 provide enable (ENB) functions to better control the operation of the driver applications. ENBA and ENBB are implemented on pins 1 and 8, which previously were left unused in the industry-standard pinout. ENBA and ENBB are pulled up internally to VDD for active-high logic and can be left open for standard operation.
Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | UCC2742x-EP Dual 4-A High-Speed Low-Side MOSFET Driver With Enable datasheet (Rev. C) | PDF | HTML | 23 Dec 2014 |
* | VID | UCC27423-EP VID V6207624 | 21 Jun 2016 | |
* | VID | UCC27423-EP VID V6207624 | 21 Jun 2016 | |
* | Radiation & reliability report | UCC27423MDREP Reliability Report | 06 Jan 2012 | |
Application note | Why use a Gate Drive Transformer? | PDF | HTML | 04 Mar 2024 | |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 Feb 2020 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 Feb 2020 |
Design & development
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PSPICE-FOR-TI — PSpice® for TI design and simulation tool
Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
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