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TRF0208-SEP

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Radiation-tolerant, near-DC to 11GHz 3dB BW single-ended to differential RF amplifier

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Data sheet

TRF0208-SEP

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Data sheet Order now

Product details

Current consumption (mA) 130 Frequency (min) (MHz) 1 Frequency (max) (MHz) 11000 Gain (typ) (dB) 16 Noise figure (typ) (dB) 6.8 OIP3 (typ) (dBm) 36 P1dB (typ) (dBm) 14.5 Number of channels 1 Operating temperature range (°C) 25 to 25 Type Active Balun, RF FDA Rating Space
Current consumption (mA) 130 Frequency (min) (MHz) 1 Frequency (max) (MHz) 11000 Gain (typ) (dB) 16 Noise figure (typ) (dB) 6.8 OIP3 (typ) (dBm) 36 P1dB (typ) (dBm) 14.5 Number of channels 1 Operating temperature range (°C) 25 to 25 Type Active Balun, RF FDA Rating Space
WQFN-FCRLF (RPV) 12 4 mm² 2 x 2
  • Vendor item drawing available, VID V62/23605
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Excellent performance driving RF ADCs
  • Fixed power gain of 16dB in single-ended-to-differential mode
  • Bandwidth: 11GHz, 3dB
  • Gain flatness: 8GHz, 1dB
  • OIP3: 36dBm (2GHz), 32dBm (6GHz)
  • P1dB: 14.5dBm (2GHz), 11dBm (6GHz)
  • NF: 6.8dB (2GHz), 6.8dB (6GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3V
  • Active current: 138mA
  • Vendor item drawing available, VID V62/23605
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Excellent performance driving RF ADCs
  • Fixed power gain of 16dB in single-ended-to-differential mode
  • Bandwidth: 11GHz, 3dB
  • Gain flatness: 8GHz, 1dB
  • OIP3: 36dBm (2GHz), 32dBm (6GHz)
  • P1dB: 14.5dBm (2GHz), 11dBm (6GHz)
  • NF: 6.8dB (2GHz), 6.8dB (6GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3V
  • Active current: 138mA

The TRF0208-SEP is a very high performance fully differential amplifier (FDA) optimized for radio frequency (RF) applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high-performance ADC12DJ5200-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0208-SEP operates on a single-rail supply and consumes about 138mA of active current. A power-down feature is available for power saving.

The TRF0208-SEP is a very high performance fully differential amplifier (FDA) optimized for radio frequency (RF) applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high-performance ADC12DJ5200-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0208-SEP operates on a single-rail supply and consumes about 138mA of active current. A power-down feature is available for power saving.
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Technical documentation

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* Data sheet TRF0208-SEP Radiation-Tolerant, Near-DC to 11GHz, Fully Differential RF Amplifier datasheet (Rev. A) PDF | HTML 06 Jun 2024
EVM User's guide TRF0208-SEP Evaluation Module User's Guide (Rev. A) PDF | HTML 03 Jul 2024
Certificate TRF0208SEP-EVM EU Declaration of Conformity (DoC) 12 Jun 2024
Technical article Phased array antenna systems: A new paradigm for electronics in satellites (Rev. A) PDF | HTML 11 Jun 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TRF0208SEP-EVM — TRF0208-SEP evaluation module

The TRF0208-SEP evaluation module (EVM) is used to evaluate the TRF0208-SEP device, which is a differential RF amplifier available in a 2mm × 2mm, 12-pin WQFN package. The device is designed to drive high-speed and RF differential input ADCs, often eliminating the need for a two-component (gain (...)

User guide: PDF | HTML
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Reference designs

TIDA-010274 — Space-grade discrete RF sampling transceiver reference design

This reference design incorporates a 10 GSPS dual digital-to-analog converter and a 5 GSPS dual analog-to-digital converter with active baluns on the RF interface supporting up through X-band. The design also incorporates a space-grade clocking daughter card and a space-grade power solution (...)
Design guide: PDF
Package Pins CAD symbols, footprints & 3D models
WQFN-FCRLF (RPV) 12 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

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