CSD25480F3
-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection
CSD25480F3
- Low on-resistance
- Ultra-low Qg and Qgd
- Ultra-small footprint
- 0.73 mm × 0.64 mm
- Low profile
- 0.36-mm max height
- Integrated ESD protection diode
- Lead and halogen free
- RoHS compliant
This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
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Technical documentation
Design & development
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CSD25480F3 TINA-TI Reference Design
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Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
PICOSTAR (YJM) | 3 | Ultra Librarian |
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