CSD13302W
- Ultra Low On Resistance
- Low Qg and Qgd
- Small Footprint 1 mm × 1 mm
- Low Profile 0.62 mm Height
- Pb Free
- RoHS Compliant
- Halogen Free
This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1 mm outline with excellent thermal characteristics and an ultra low profile.
Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD13302W 12 V N Channel NexFET Power MOSFET datasheet | PDF | HTML | 16 Mar 2015 |
Application note | MOSFET Support and Training Tools (Rev. F) | PDF | HTML | 14 Jun 2024 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | 25 Mar 2024 | |
Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | 18 Dec 2023 | |
Application note | Solving Assembly Issues with Chip Scale Power MOSFETs | PDF | HTML | 14 Dec 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
More literature | WCSP Handling Guide | 07 Nov 2019 | ||
Application note | AN-1112 DSBGA Wafer Level Chip Scale Package (Rev. AI) | 14 Jun 2019 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
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Supported products & hardware
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Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
DSBGA (YZB) | 4 | Ultra Librarian |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
- Fab location
- Assembly location
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
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