This design demonstrates a 36V, 50A gallium nitride (GaN) field-effect transistor (FET) power stage for driving a three-phase brushless DC motor in cordless tools operating from a 5-cell Li-ion battery to a 10-cell battery pack. This reference design uses the LMG3100R017 GaN FET with integrated GaN-FET drive to improve the motor control system efficiency and performance. Additionally, the design offers a TI BoosterPack™ Plug-in Module compatible with 3.3V I/O interface that can connect to a C2000™ MCU LaunchPad™ development kit or MSPM0 MCU LaunchPad development kit for quick and easy performance evaluation of TI GaN technology.
Features
- 6.50mm × 4.0mm LMG3100R017 GaN FET with integrated driver enables high power density and easy PCB layout
- High efficiency (> 99% peak) at 20kHz PWM enables operation at 25°C ambient up to 50A peak current without heat sink, 98.5% efficiency at 80kHz PWM in 50A peak current
- LMG3100R017 enables operation at higher PWM frequencies to help reduce DC-bus capacitor size and height by replacing electrolytic with ceramic capacitors
- Zero reverse recovery losses reduce switch node oscillations
- Low dead time of <20ns minimizes phase voltage distortions
- Supports high-speed motor control with high PWM frequency
- Uses low-side current sampling, and adds phase voltage sampling to support verification of sensorless field-oriented control (FOC) or sensorless trapezoidal control