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UCC21220

ACTIVE

3.0kVrms, 4A/6A dual-channel isolated gate driver with disable pin & 8V UVLO for MOSFETs & GaNFETs

Product details

Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch IGBT, MOSFET Peak output current (A) 6 Features Disable Output VCC/VDD (max) (V) 18 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5, 8
Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch IGBT, MOSFET Peak output current (A) 6 Features Disable Output VCC/VDD (max) (V) 18 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 990 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5, 8
SOIC (D) 16 59.4 mm² 9.9 x 6
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Supports basic and functional isolation
  • CMTI greater than 125V/ns
  • Up to 4A peak source, 6A peak sink output
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO Options
  • Junction temperature range (Tj) –40°C to 150°C
  • Narrow body SOIC-16 (D) package
  • TTL and CMOS compatible inputs
  • Safety-related certifications:
    • 4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17) (planned)
    • 3000VRMS isolation for 1 minute per UL 1577 (planned)
    • CQC certification per GB4943.1-2022 (planned)
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Supports basic and functional isolation
  • CMTI greater than 125V/ns
  • Up to 4A peak source, 6A peak sink output
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply
    • 5V and 8V VDD UVLO Options
  • Junction temperature range (Tj) –40°C to 150°C
  • Narrow body SOIC-16 (D) package
  • TTL and CMOS compatible inputs
  • Safety-related certifications:
    • 4242VPK isolation per DIN EN IEC 60747-17 (VDE 0884-17) (planned)
    • 3000VRMS isolation for 1 minute per UL 1577 (planned)
    • CQC certification per GB4943.1-2022 (planned)

The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 125V/ns common-mode transient immunity (CMTI).

These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.

Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2V when unpowered or floated.

With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21220 and UCC21220A devices are basic and functional isolated dual-channel gate drivers with 4A peak-source and 6A peak-sink current. They are designed to drive power MOSFETs and GaNFETs in PFC, Isolated DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 125V/ns common-mode transient immunity (CMTI).

These devices can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions due to the best-in-class delay matching performance.

Protection features include the following: DIS pin shuts down both outputs simultaneously when it is set high, all supplies have undervoltage lockout (UVLO), and active pulldown protection clamps the output below 2V when unpowered or floated.

With these features, these devices enable high efficiency, high power density, and robustness in a wide variety of power applications.

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Technical documentation

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Type Title Date
* Data sheet UCC21220, UCC21220A 4A, 6A, Dual-Channel Basic and Functional Isolated Gate Drivers with High Noise Immunity datasheet (Rev. G) PDF | HTML 08 Nov 2024
Certificate VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. W) 31 Jan 2024
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 25 Jan 2024
Certificate UCC21220 CQC Certificate of Product Certification (Malaysia) 29 Aug 2023
Certificate UCC21220 CQC Certificate of Product Certification 16 Aug 2023
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Test report Peak Efficiency at 99%, 585-W High-Voltage Buck Reference Design 24 Apr 2020
E-book Ein Techniker-Leitfaden für Industrieroboter-Designs 25 Mar 2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
E-book E-book: An engineer’s guide to industrial robot designs 12 Feb 2020
Certificate UL Certification E181974 Vol 4. Sec 9 (Rev. A) 22 Jul 2019
User guide Gate Drive Voltage vs. Efficiency 25 Apr 2019
Application brief How to Drive High Voltage GaN FETs with UCC21220A 06 Mar 2019
White paper Impact of an isolated gate driver (Rev. A) 20 Feb 2019
Application note Common Mode Transient Immunity (CMTI) for UCC2122x Isolated Gate Drivers 19 Jul 2018
White paper Demystifying high-voltage power electronics for solar inverters 06 Jun 2018
Application note Solar Inverter Layout Considerations for UCC21220 06 Jun 2018
Technical article Boosting efficiency for your solar inverter designs PDF | HTML 24 May 2018
EVM User's guide UCC21220EVM-009 User's Guide (Rev. B) 12 Apr 2018
Technical article Why capacitive isolation: a vital building block for sensors in smart cities PDF | HTML 16 Jan 2018
Technical article Making a solar inverter more reliable than the sun PDF | HTML 01 Aug 2017

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21220EVM-009 — UCC21220 4-A, 6-A 3.0-kVRMS Isolated Dual-Channel Gate Driver Evaluation Module

UCC21220EVM-009 is designed for evaluating UCC21220, which is a 3.0-kVRMS Isolated Dual-Channel Gate Driver with 4.0-A source and 6.0-A sink peak current capability. This EVM could be served to evaluate the driver IC against its datsheet. The EVM can also be used as Driver IC component selection (...)
User guide: PDF
Not available on TI.com
Simulation model

UCC21220AD PSpice Transient Model

SLUM649.ZIP (58 KB) - PSpice Model
Simulation model

UCC21220AD Unencrypted PSpice Transient Model

SLUM650.ZIP (3 KB) - PSpice Model
Simulation model

UCC21220D PSpice Transient Model

SLUM602.ZIP (51 KB) - PSpice Model
Simulation model

UCC21220D Unencrypted PSpice Transient Model

SLUM603.ZIP (3 KB) - PSpice Model
Calculation tool

SLURAZ5 UCC21520 Bootstrap Calculator 1.0

Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21220 3.0kVrms, 4A/6A dual-channel isolated gate driver with disable pin & 8V UVLO for MOSFETs & GaNFETs UCC21222 3.0kVrms 4A/6A dual-channel isolated gate driver with disable pin, programmable deadtime & 8V UVLO UCC21520 5.7kVRMS 4A/6A dual-channel isolated gate driver with dual input and disable pin in DW package UCC21521 5.7kVrms, 4A/6A dual-channel isolated gate driver with dual input, enable, 8V UVLO & LGA pack
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP23338 — 3.6kW single-phase totem-pole bridgeless PFC reference design with e-meter functionality

This reference design is a Gallium nitride (GaN) based, 3.6kW, single-phase continuous conduction mode (CCM) totem-pole bridgeless power factor correction (PFC) converter, targeting M-CRPS power supply. This design includes e-meter functionality with 0.5% accuracy, eliminating the need for (...)
Test report: PDF
Reference designs

PMP23069 — 3-kW, 180-W/in3 single-phase totem-pole bridgeless PFC reference design with 16-A max input

This reference design demonstrates a method to control a continuous conduction mode Totem pole power factor correction converter (PFC) using C2000 F28003x and F28004x microcontrollers. The PFC also works as inverter in grid connected (current controlled) mode. The converter is designed to support a (...)
Test report: PDF
Reference designs

PMP22220 — 1500-W AC switch bridgeless PFC reference design

This reference design is an AC switch bridgeless power factor correction (PFC) that operates with continuous conduction mode (CCM). It takes universal AC-input voltage (90 VAC to 264 VAC), provides 390-V, 1000-W low-line output and 1500-W high-line output. This design uses the UCD3138 digital (...)
Test report: PDF
Schematic: PDF
Reference designs

PMP40500 — 54-VDC input, 12-V 42-A output half-bridge reference design

This 12-V, 42-A output half-bridge reference design is for bus converters in wired networking campus and branch switches. The design features high efficiency and various fault protections (over-current and short-circuit). The design provides an efficiency comparison using 3 kVRMS basic and (...)
Test report: PDF
Schematic: PDF
Package Pins CAD symbols, footprints & 3D models
SOIC (D) 16 Ultra Librarian

Ordering & quality

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