This reference design demonstrates a high-power density 12V to 60V 3-phase power stage using three LMG2100R044 100V, 35A GaN half-bridges with integrated GaN FETs, driver and bootstrap diode specifically for motor-integrated servo drives and robotics applications.
Accurate phase-current sensing is achieved through the IN241A current sense amplifier, DC-link and phase voltages are also measured allowing validation of advanced sensorless designs, such as the InstaSPIN-FOC™. The design offers a TI BoosterPack compatible 3.3-V I/O interface to connect to a C2000™ MCU LaunchPad™ development kit or Sitara™ microcontrollers for quick and easy performance evaluation of our GaN technology.
Features
- High efficiency (99.3% peak) at 40kHz PWM enables operation at 25C ambient and up to 16Arms continuous current without heatsink
- Small form factor GaN half-bridge power stage enables high power density and simplifies PCB layout
- GaN half-bridge enables operation at higher PWM frequencies to help reduce DC-bus capacitor height while replacing electrolytics with ceramic capacitors
- Zero reverse recovery losses reduce switch node oscillations
- Low dead time of 16.6ns minimize phase voltage distortions Precision phase current sense with ±33A range using 1-mΩ shunt and current sense amplifier with high PWM rejection