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TSU5511

OBSOLETE

SP3T Switch with Impedance Detection Micro-USB Switch

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Data sheet

TSU5511

OBSOLETE
Data sheet Order now

Product details

Type Passive mux Function USB 2.0 USB speed (Mbps) 480 Number of channels 2 Supply voltage (max) (V) 6.7 Supply voltage (min) (V) 2.8 Ron (typ) (mΩ) 4500 Input/output voltage (min) (V) -1.3 Input/output voltage (max) (V) 3.6 Configuration 3:1 Features Audio Switch (Negative Rail Capability), Charging Capability, Click-Pop Reduction, I2C interface, Impedance Detection, UART, USB 2.0 Rating Catalog Operating temperature range (°C) -40 to 85 Supply current (max) (µA) 70 ESD HBM (typ) (kV) 2 Bandwidth (MHz) 830
Type Passive mux Function USB 2.0 USB speed (Mbps) 480 Number of channels 2 Supply voltage (max) (V) 6.7 Supply voltage (min) (V) 2.8 Ron (typ) (mΩ) 4500 Input/output voltage (min) (V) -1.3 Input/output voltage (max) (V) 3.6 Configuration 3:1 Features Audio Switch (Negative Rail Capability), Charging Capability, Click-Pop Reduction, I2C interface, Impedance Detection, UART, USB 2.0 Rating Catalog Operating temperature range (°C) -40 to 85 Supply current (max) (µA) 70 ESD HBM (typ) (kV) 2 Bandwidth (MHz) 830
DSBGA (YZP) 20 6.1875 mm² 2.25 x 2.75
  • Compatible Accessories
    • USB Data Cable
    • UART Cable
    • Charger (Dedicated Charger or Host/Hub Charger)
    • Stereo Headset With Mic
  • Integrated LDOs for VREF and Mic Bias
  • USB Path Supports USB 2.0 High Speed
  • Audio Path Provides Negative Rail Support and Click/Pop Reduction
  • Supports Factory Test Mode
  • 1.8-V Compatible I2C Interface
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • ESD Performance DP/DM/ID/VBUS to GND
    • ±8-kV Contact Discharge (IEC 61000-4-2)
    • ±15-kV Air Gap Discharge (IEC 61000-4-2)
  • APPLICATIONS
    • Cellular Telephones
  • Compatible Accessories
    • USB Data Cable
    • UART Cable
    • Charger (Dedicated Charger or Host/Hub Charger)
    • Stereo Headset With Mic
  • Integrated LDOs for VREF and Mic Bias
  • USB Path Supports USB 2.0 High Speed
  • Audio Path Provides Negative Rail Support and Click/Pop Reduction
  • Supports Factory Test Mode
  • 1.8-V Compatible I2C Interface
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • ESD Performance DP/DM/ID/VBUS to GND
    • ±8-kV Contact Discharge (IEC 61000-4-2)
    • ±15-kV Air Gap Discharge (IEC 61000-4-2)
  • APPLICATIONS
    • Cellular Telephones

The TSU5511 is designed to interface the cell phone UART, USB, and audio chips with external peripherals via a micro-USB connector. The switch features impedance detection for identification of various accessories that are attached through DP and DM of the micro-USB port. When an accessory is plugged into the micro-USB port, the switch uses a detection mechanism to identify the accessory (see State Machine for details). It will then switch to the appropriate channel—data, audio, or UART.

The TSU5511 has an I2C interface for communication with the cellphone baseband or applications processor. An interrupt is generated when anything plugged into the micro-USB is detected. Another interrupt is generated when the device is unplugged.

The TSU5511 is designed to interface the cell phone UART, USB, and audio chips with external peripherals via a micro-USB connector. The switch features impedance detection for identification of various accessories that are attached through DP and DM of the micro-USB port. When an accessory is plugged into the micro-USB port, the switch uses a detection mechanism to identify the accessory (see State Machine for details). It will then switch to the appropriate channel—data, audio, or UART.

The TSU5511 has an I2C interface for communication with the cellphone baseband or applications processor. An interrupt is generated when anything plugged into the micro-USB is detected. Another interrupt is generated when the device is unplugged.
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Type Title Date
* Data sheet SP3T SWITCH WITH IMPEDANCE DETECTION datasheet 02 Sep 2010

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