Software development kit (SDK)
AFE10004
4-channel power-amplifier monitor and controller with EEPROM and output switches
Data sheet
AFE10004
- Local and remote diode temperature sensor
- ±2.5°C accuracy, maximum
- 0.0625°C resolution
- Internal EEPROM for autonomous operation
- Four independent transfer functions storage
- Device configuration storage
- Open space for user storage
- Four analog outputs
- Four monotonic DACs: 1.22-mV resolution
- Automatically configured output ranges:
- Positive output voltage: 5.5 V, maximum
- Negative output voltage: –10 V, minimum
- High current drive capability:
- Source up to 100 mA
- Sink up to 20 mA
- High capacitive load tolerant: up to 15 µF
- Gate bias on and off control switches
- Two programmable off voltages
- Two auxiliary DACs: 1.22-mV resolution
- Fast switching time: 50 ns, typical
- Low resistance: 3 Ω, maximum
- Two programmable off voltages
- Built-in sequencing control
- Internal 2.5-V reference
- SPI and I2C interfaces: 1.7-V to 3.6-V operation
- SPI: 4-wire Interface
- I2C: Eight selectable slave addresses
- Specified temperature range: –40°C to +125°C
- Operating temperature range –40°C to +150°C
The AFE10004 is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four, independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM, allowing any temperature effects to be corrected without additional external circuitry. After start up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.
The AFE10004 has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.
The function integration and wide operating temperature range make the AFE10004 an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN. Contact TI sales for the full data sheet.
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Technical documentation
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View all 2 | Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches datasheet | PDF | HTML | 08 Dec 2020 |
| Application note | Temperature Compensation of Power Amplifier FET Bias Voltages | PDF | HTML | 29 Apr 2021 |
Design & development
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Simulation tool
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| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |
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