SBVS414
November 2021
TPS7H1210-SEP
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Internal Current Limit
7.3.2
Enable Pin Operation
7.3.3
Programmable Soft-Start
7.3.4
Thermal Protection
7.4
Device Functional Modes
7.4.1
Normal Operation
7.4.2
Dropout Operation
7.4.3
Disabled
8
Application and Implementation
8.1
Application Information
8.1.1
Adjustable Operation
8.1.2
Capacitor Recommendations
8.1.3
Noise Reduction and Feed-Forward Capacitor Requirements
8.1.4
Power-Supply Rejection Ratio (PSRR)
8.1.5
Output Noise
8.1.6
Transient Response
8.1.7
Post DC-DC Converter Filtering
8.1.8
Power for Precision Analog
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.3
Application Curves
8.3
Do's and Don’ts
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.1.1
Improve PSRR and Noise Performance
10.2
Layout Example
10.3
Thermal Performance
11
Device and Documentation Support
11.1
Device Support
11.1.1
Development Support
11.1.1.1
Spice Models
11.2
Documentation Support
11.2.1
Related Documentation
11.3
Receiving Notification of Documentation Updates
11.4
Support Resources
11.5
Trademarks
11.6
Electrostatic Discharge Caution
11.7
Glossary
12
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
RGW|20
MPQF122C
Thermal pad, mechanical data (Package|Pins)
RGW|20
QFND012L
Orderable Information
sbvs414_oa
sbvs414_pm
1
Features
Vendor item drawing available, VID V62/21616
Total ionizing dose (TID) characterized to 30 krad(Si)
TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
Single-event effects (SEE) characterized
Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm
2
/mg
Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm
2
/mg
Low noise: 13.7-μV
RMS
typical (10 Hz to 100 kHz)
High power-supply rejection ration, PSRR (typical at V
IN
= –6 V, V
OUT
= –5 V, I
OUT
= 1 A):
61 dB at 100 Hz
61 dB at 100 kHz
41 dB at 1 MHz
Input voltage range: –3 V to –16.5 V
Adjustable output: –1.2 V to –15.5 V
Up to 1-A output current
Stable with ceramic capacitors ≥ 10 μF
Built-in current-limit and thermal shutdown protection
Space Enhanced Plastic (SEP)
Controlled baseline
Gold bondwire
NiPdAu lead finish
One assembly and test site
One fabrication site
Military (–55°C to 125°C) temperature range
Extended product life cycle
Extended product-change notification (PCN)
Product traceability
Enhanced mold compound for low outgassing