SLVSBX4C June   2013  – May 2017 TPS65150-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Boost Converter
        1. 7.3.1.1 Setting the Boost Converter Output Voltage
        2. 7.3.1.2 Boost Converter Rectifier Diode
        3. 7.3.1.3 Choosing the Boost Converter Output Capacitance
        4. 7.3.1.4 Compensation
        5. 7.3.1.5 Soft Start
        6. 7.3.1.6 Gate Drive Signal
      2. 7.3.2 Negative Charge Pump
        1. 7.3.2.1 Negative Charge Pump Output Voltage
        2. 7.3.2.2 Negative Charge Pump Flying Capacitance
        3. 7.3.2.3 Negative Charge Pump Output Capacitance
        4. 7.3.2.4 Negative Charge Pump Diodes
      3. 7.3.3 Positive Charge Pump
        1. 7.3.3.1 Positive Charge Pump Output Voltage
        2. 7.3.3.2 Positive Charge Pump Flying Capacitance
        3. 7.3.3.3 Positive Charge Pump Output Capacitance
        4. 7.3.3.4 Positive Charge Pump Diodes
      4. 7.3.4 Power-On Sequencing, DLY1, DLY2
      5. 7.3.5 Gate Voltage Shaping
      6. 7.3.6 VCOM Buffer
      7. 7.3.7 Protection
        1. 7.3.7.1 Boost Converter Overvoltage Protection
        2. 7.3.7.2 Adjustable Fault Delay
        3. 7.3.7.3 Thermal Shutdown
        4. 7.3.7.4 Undervoltage Lockout
    4. 7.4 Device Functional Modes
      1. 7.4.1 VI > VIT+
      2. 7.4.2 VI < VIT-
      3. 7.4.3 Fault Mode
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Boost Converter Design Procedure
          1. 8.2.2.1.1 Inductor Selection
        2. 8.2.2.2  Rectifier Diode Selection
        3. 8.2.2.3  Setting the Output Voltage
        4. 8.2.2.4  Output Capacitor Selection
        5. 8.2.2.5  Input Capacitor Selection
        6. 8.2.2.6  Compensation
        7. 8.2.2.7  Negative Charge Pump
          1. 8.2.2.7.1 Choosing the Output Capacitance
          2. 8.2.2.7.2 Choosing the Flying Capacitance
          3. 8.2.2.7.3 Choosing the Feedback Resistors
          4. 8.2.2.7.4 Choosing the Diodes
        8. 8.2.2.8  Positive Charge Pump
          1. 8.2.2.8.1 Choosing the Flying Capacitance
          2. 8.2.2.8.2 Choosing the Output Capacitance
          3. 8.2.2.8.3 Choosing the Feedback Resistors
          4. 8.2.2.8.4 Choosing the Diodes
        9. 8.2.2.9  Gate Voltage Shaping
        10. 8.2.2.10 Power-On Sequencing
        11. 8.2.2.11 Fault Delay
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • AEC-Q100 Qualified:
    • Device Temperature Grade 1: –40°C to 125°C Junction Temperature
    • Device HBM ESD Classification According to AEC - Q100-002
    • Device CDM ESD Classification According to AEC - Q100-011
  • Input Voltage Range: 1.8 V to 6 V
  • V(VS) Boost Converter
    • Up to 15 V Output Voltage
    • < 1% Output Voltage Accuracy
    • 2-A Switch Current Limit
  • V(VGH) Positive Regulated Charge Pump Driver
    • Up to 30 V Output Voltage
    • Gate Voltage Shaping
  • V(VGL) Negative Regulated Charge Pump Driver
    • Down to –15 V Output Voltage
  • Integrated VCOM Buffer
  • Adjustable Power On Sequencing
    • Gate Drive Signal for External Isolation MOSFET for V(VS)
  • Protection Features
    • Out-of-Regulation Protection
    • Over-voltage Protection
    • Adjustable Fault Detection Timing
    • Thermal Shutdown
  • 24-Pin TSSOP Package with Exposed Thermal Pad

Applications

  • LCD Displays ranging approx. from 4" to 17"
    • Automotive Infotainment & Cluster
    • Automotive Navigation Systems
    • Rear Seat Entertainment
    • Smart Mirror

Description

The TPS65150-Q1 is an integrated power-supply for automotive LCD applications. The device integrates a boost converter for the source voltage and two regulated adjustable charge pump drivers for the gate voltages. For reduced external cost, improved picture quality and reduced image sticking, the device includes a VCOM buffer and a gate-voltage shaping function.

The device is designed to operate from a supply voltage of 1.8 V to 6 V making it ideal for automotive LCD applications using a fixed 3.3 V or 5 V input-voltage rail.

Adjustable power-on sequencing for VGL and VGH allow the device to be optimized for a variety of displays.

For protection from system malfunction, the TPS65150-Q1 integrates an adjustable shutdown latch feature. The device monitors the outputs (V(VS), V(VGL), V(VGH)); and, as soon as one of the outputs falls below its power-good threshold for longer than the adjustable fault delay time, the device enters shutdown.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
TPS65150-Q1 TSSOP (24) 6.40 mm × 7.80 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Block Diagram

TPS65150-Q1 FP_Block_SLVSBX4.gif