SPNS230D October   2013  – February 2015 TMS570LS3137-EP

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison Table
    1. 3.1 Device Comparison
  4. 4Pin Configuration and Functions
    1. 4.1 Pin Diagrams
      1. 4.1.1 Pin Attributes
        1. 4.1.1.1 GWT Package
          1. 4.1.1.1.1  Multi-Buffered Analog-to-Digital Converters (MibADC)
          2. 4.1.1.1.2  Enhanced High-End Timer Modules (N2HET)
          3. 4.1.1.1.3  General-Purpose Input / Output (GPIO)
          4. 4.1.1.1.4  FlexRay Interface Controller (FlexRay)
          5. 4.1.1.1.5  Controller Area Network Controllers (DCAN)
          6. 4.1.1.1.6  Local Interconnect Network Interface Module (LIN)
          7. 4.1.1.1.7  Standard Serial Communication Interface (SCI)
          8. 4.1.1.1.8  Inter-Integrated Circuit Interface Module (I2C)
          9. 4.1.1.1.9  Standard Serial Peripheral Interface (SPI)
          10. 4.1.1.1.10 Multi-Buffered Serial Peripheral Interface Modules (MibSPI)
          11. 4.1.1.1.11 Ethernet Controller
          12. 4.1.1.1.12 External Memory Interface (EMIF)
          13. 4.1.1.1.13 Embedded Trace Macrocell for Cortex-R4F CPU (ETM-R4F)
          14. 4.1.1.1.14 RAM Trace Port (RTP)
          15. 4.1.1.1.15 Data Modification Module (DMM)
          16. 4.1.1.1.16 System Module Interface
          17. 4.1.1.1.17 Clock Inputs and Outputs
          18. 4.1.1.1.18 Test and Debug Modules Interface
          19. 4.1.1.1.19 Flash Supply and Test Pads
          20. 4.1.1.1.20 No Connects
          21. 4.1.1.1.21 Supply for Core Logic: 1.2V nominal
          22. 4.1.1.1.22 Supply for I/O Cells: 3.3V nominal
          23. 4.1.1.1.23 Ground Reference for All Supplies Except VCCAD
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Power-On Hours (POH)
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Power Consumption
    6. 5.6  Thermal Data
    7. 5.7  Switching Characteristics
    8. 5.8  Wait States Required
    9. 5.9  I/O Electrical Characteristics
    10. 5.10 Output Buffer Drive Strengths
    11. 5.11 Input Timings
    12. 5.12 Output Timings
    13. 5.13 Low-EMI Output Buffers
  6. 6System Information and Electrical Specifications
    1. 6.1  Device Power Domains
    2. 6.2  Voltage Monitor Characteristics
      1. 6.2.1 Important Considerations
      2. 6.2.2 Voltage Monitor Operation
      3. 6.2.3 Supply Filtering
    3. 6.3  Power Sequencing and Power On Reset
      1. 6.3.1 Power-Up Sequence
      2. 6.3.2 Power-Down Sequence
      3. 6.3.3 Power-On Reset: nPORRST
        1. 6.3.3.1 nPORRST Electrical and Timing Requirements
    4. 6.4  Warm Reset (nRST)
      1. 6.4.1 Causes of Warm Reset
      2. 6.4.2 nRST Timing Requirements
    5. 6.5  ARM© Cortex-R4F CPU Information
      1. 6.5.1 Summary of ARM Cortex-R4F CPU Features
      2. 6.5.2 ARM Cortex-R4F CPU Features Enabled by Software
      3. 6.5.3 Dual Core Implementation
      4. 6.5.4 Duplicate Clock Tree After GCLK
      5. 6.5.5 ARM Cortex-R4F CPU Compare Module (CCM-R4) for Safety
      6. 6.5.6 CPU Self-Test
        1. 6.5.6.1 Application Sequence for CPU Self-Test
        2. 6.5.6.2 CPU Self-Test Clock Configuration
        3. 6.5.6.3 CPU Self-Test Coverage
    6. 6.6  Clocks
      1. 6.6.1 Clock Sources
        1. 6.6.1.1 Main Oscillator
          1. 6.6.1.1.1 Timing Requirements for Main Oscillator
        2. 6.6.1.2 Low Power Oscillator (LPO)
          1. 6.6.1.2.1 Features
          2. 6.6.1.2.2 LPO Electrical and Timing Specifications
        3. 6.6.1.3 Phase Locked Loop (PLL) Clock Modules
          1. 6.6.1.3.1 Block Diagram
          2. 6.6.1.3.2 PLL Timing Specifications
        4. 6.6.1.4 External Clock Inputs
      2. 6.6.2 Clock Domains
        1. 6.6.2.1 Clock Domain Descriptions
        2. 6.6.2.2 Mapping of Clock Domains to Device Modules
      3. 6.6.3 Clock Test Mode
    7. 6.7  Clock Monitoring
      1. 6.7.1 Clock Monitor Timings
      2. 6.7.2 External Clock (ECLK) Output Functionality
      3. 6.7.3 Dual Clock Comparators
        1. 6.7.3.1 Features
        2. 6.7.3.2 Mapping of DCC Clock Source Inputs
    8. 6.8  Glitch Filters
    9. 6.9  Device Memory Map
      1. 6.9.1 Memory Map Diagram
      2. 6.9.2 Memory Map Table
      3. 6.9.3 Master/Slave Access Privileges
        1. 6.9.3.1 Special Notes on Accesses to Certain Slaves
      4. 6.9.4 POM Overlay Considerations
    10. 6.10 Flash Memory
      1. 6.10.1 Flash Memory Configuration
      2. 6.10.2 Main Features of Flash Module
      3. 6.10.3 ECC Protection for Flash Accesses
      4. 6.10.4 Flash Access Speeds
      5. 6.10.5 Flash Program and Erase Timings for Program Flash
      6. 6.10.6 Flash Program and Erase Timings for Data Flash
    11. 6.11 Tightly-Coupled RAM Interface Module
      1. 6.11.1 Features
      2. 6.11.2 TCRAMW ECC Support
    12. 6.12 Parity Protection for Peripheral RAMs
    13. 6.13 On-Chip SRAM Initialization and Testing
      1. 6.13.1 On-Chip SRAM Self-Test Using PBIST
        1. 6.13.1.1 Features
        2. 6.13.1.2 PBIST RAM Groups
      2. 6.13.2 On-Chip SRAM Auto Initialization
    14. 6.14 External Memory Interface (EMIF)
      1. 6.14.1 Features
      2. 6.14.2 Electrical and Timing Specifications
        1. 6.14.2.1 Asynchronous RAM
        2. 6.14.2.2 Synchronous Timing
    15. 6.15 Vectored Interrupt Manager
      1. 6.15.1 VIM Features
      2. 6.15.2 Interrupt Request Assignments
    16. 6.16 DMA Controller
      1. 6.16.1 DMA Features
      2. 6.16.2 Default DMA Request Map
    17. 6.17 Real Time Interrupt Module
      1. 6.17.1 Features
      2. 6.17.2 Block Diagrams
      3. 6.17.3 Clock Source Options
      4. 6.17.4 Network Time Synchronization Inputs
    18. 6.18 Error Signaling Module
      1. 6.18.1 Features
      2. 6.18.2 ESM Channel Assignments
    19. 6.19 Reset / Abort / Error Sources
    20. 6.20 Digital Windowed Watchdog
    21. 6.21 Debug Subsystem
      1. 6.21.1  Block Diagram
      2. 6.21.2  Debug Components Memory Map
      3. 6.21.3  JTAG Identification Code
      4. 6.21.4  Debug ROM
      5. 6.21.5  JTAG Scan Interface Timings
      6. 6.21.6  Advanced JTAG Security Module
      7. 6.21.7  Embedded Trace Macrocell (ETM-R4)
        1. 6.21.7.1 ETM TRACECLKIN Selection
        2. 6.21.7.2 Timing Specifications
      8. 6.21.8  RAM Trace Port (RTP)
        1. 6.21.8.1 Features
        2. 6.21.8.2 Timing Specifications
      9. 6.21.9  Data Modification Module (DMM)
        1. 6.21.9.1 Features
        2. 6.21.9.2 Timing Specifications
      10. 6.21.10 Boundary Scan Chain
  7. 7Peripheral Information
    1. 7.1  Peripheral Legend
    2. 7.2  Multi-Buffered 12bit Analog-to-Digital Converter
      1. 7.2.1 Features
      2. 7.2.2 Event Trigger Options
        1. 7.2.2.1 Default MIBADC1 Event Trigger Hookup
        2. 7.2.2.2 Alternate MIBADC1 Event Trigger Hookup
        3. 7.2.2.3 Default MIBADC2 Event Trigger Hookup
        4. 7.2.2.4 Alternate MIBADC2 Event Trigger Hookup
      3. 7.2.3 ADC Electrical and Timing Specifications
      4. 7.2.4 Performance (Accuracy) Specifications
        1. 7.2.4.1 MibADC Nonlinearity Errors
        2. 7.2.4.2 MibADC Total Error
    3. 7.3  General-Purpose Input/Output
      1. 7.3.1 Features
    4. 7.4  Enhanced High-End Timer (N2HET)
      1. 7.4.1 Features
      2. 7.4.2 N2HET RAM Organization
      3. 7.4.3 Input Timing Specifications
      4. 7.4.4 N2HET1-N2HET2 Interconnections
      5. 7.4.5 N2HET Checking
        1. 7.4.5.1 Internal Monitoring
        2. 7.4.5.2 Output Monitoring using Dual Clock Comparator (DCC)
      6. 7.4.6 Disabling N2HET Outputs
      7. 7.4.7 High-End Timer Transfer Unit (HET-TU)
        1. 7.4.7.1 Features
        2. 7.4.7.2 Trigger Connections
    5. 7.5  FlexRay Interface
      1. 7.5.1 Features
      2. 7.5.2 Electrical and Timing Specifications
      3. 7.5.3 FlexRay Transfer Unit
    6. 7.6  Controller Area Network (DCAN)
      1. 7.6.1 Features
      2. 7.6.2 Electrical and Timing Specifications
    7. 7.7  Local Interconnect Network Interface (LIN)
      1. 7.7.1 LIN Features
    8. 7.8  Serial Communication Interface (SCI)
      1. 7.8.1 Features
    9. 7.9  Inter-Integrated Circuit (I2C)
      1. 7.9.1 Features
      2. 7.9.2 I2C I/O Timing Specifications
    10. 7.10 Multi-Buffered / Standard Serial Peripheral Interface
      1. 7.10.1 Features
      2. 7.10.2 MibSPI Transmit and Receive RAM Organization
      3. 7.10.3 MibSPI Transmit Trigger Events
        1. 7.10.3.1 MIBSPI1 Event Trigger Hookup
        2. 7.10.3.2 MIBSPI3 Event Trigger Hookup
        3. 7.10.3.3 MIBSPI5 Event Trigger Hookup
      4. 7.10.4 MibSPI/SPI Master Mode I/O Timing Specifications
      5. 7.10.5 SPI Slave Mode I/O Timings
    11. 7.11 Ethernet Media Access Controller
      1. 7.11.1 Ethernet MII Electrical and Timing Specifications
      2. 7.11.2 Ethernet RMII Timing
      3. 7.11.3 Management Data Input/Output (MDIO)
  8. 8Device and Documentation Support
    1. 8.1 Device and Development-Support Tool Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation from Texas Instruments
      2. 8.2.2 Community Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
    6. 8.6 Device Identification
      1. 8.6.1 Device Identification Code Register
      2. 8.6.2 Die Identification Registers
    7. 8.7 Module Certifications
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Packaging Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Device Overview

1.1 Features

  • High-Performance Microcontroller for Safety-Critical Applications
    • Dual CPUs Running in Lockstep
    • ECC on Flash and RAM interfaces
    • Built-In Self-Test for CPU and On-chip RAMs
    • Error Signaling Module with Error Pin
    • Voltage and Clock Monitoring
  • ARM®Cortex™ – R4F 32-Bit RISC CPU
    • Efficient 1.66 DMIPS/MHz with 8-Stage Pipeline
    • FPU with Single- and Double-Precision
    • 12-Region Memory Protection Unit
    • Open Architecture with Third-Party Support
  • Operating Conditions
    • Up to 180-MHz System Clock
    • Core Supply Voltage (VCC): 1.2 V Nominal
    • I/O Supply Voltage (VCCIO): 3.3 V Nominal
    • ADC Supply Voltage (VCCAD): 3.0 to 5.25 V
    • IP Modules GBD for -40°C to 125°C Only includes Flash, MibADC timings, nPORRST, N2HET, and FlexRay
  • Integrated Memory
    • 3MB of Program Flash With ECC
    • 256KB of RAM With ECC
    • 64KB of Flash With ECC for Emulated EEPROM
  • 16-Bit External Memory Interface
  • Common Platform Architecture
    • Consistent Memory Map Across Family
    • Real-Time Interrupt Timer (RTI) OS Timer
    • 96-Channel Vectored Interrupt Module (VIM)
    • 2-Channel Cyclic Redundancy Checker (CRC)
  • Direct Memory Access (DMA) Controller
    • 16 Channels and 32 Control Packets
    • Parity Protection for Control Packet RAM
    • DMA Accesses Protected by Dedicated MPU
  • Frequency-Modulated Phase-Locked-Loop (FMPLL) with Built-In Slip Detector
  • Separate Nonmodulating PLL
  • IEEE 1149.1 JTAG, Boundary Scan and ARM CoreSight™ Components
  • JTAG Security Module
  • Trace and Calibration Capabilities
    • Embedded Trace Macrocell (ETM-R4)
    • Data Modification Module (DMM)
    • RAM Trace Port (RTP)
    • Parameter Overlay Module (POM)
  • Multiple Communication Interfaces
    • 10/100 Mbps Ethernet MAC (EMAC)
      • IEEE 802.3 Compliant (3.3-V I/O only)
      • Supports MII, RMII and MDIO
    • FlexRay Controller with Two Channels
      • 8 KB message RAM with Parity Protection
      • Dedicated Transfer Unit (FTU)
    • Three CAN Controllers (DCANs)
      • 64 Mailboxes, Each with Parity Protection
      • Compliant to CAN Protocol Version 2.0B
    • Local Interconnect Network (LIN) Interface Controller
      • Compliant to LIN Protocol Version 2.1
      • Can be Configured as a Second SCI
    • Standard Serial Communication Interface (SCI)
    • Inter-Integrated Circuit (I2C)
    • Three Multibuffered Serial Peripheral Interfaces (MibSPIs)
      • 128 Words with Parity Protection Each
    • Two Standard Serial Peripheral Interfaces (SPIs)
  • Two High-End Timer Modules (N2HETs)
    • N2HET1: 32 Programmable Channels
    • N2HET2: 18 Programmable Channels
    • 160-Word Instruction RAM with Parity Protection Each
    • Each N2HET Includes Hardware Angle Generator
    • Dedicated Transfer Unit with MPU for Each N2HET (HTU)
  • Two 10- or 12-bit Multibuffered ADC Modules
    • ADC1: 24 Channels
    • ADC2: 16 Channels Shared with ADC1
    • 64 Result Buffers with Parity Protection Each
  • Sixteen General-Purpose Input/Output Pins (GPIO) Capable of Generating Interrupts
  • Package
    • 337-Ball Grid Array (SnPb) (GWT)

1.2 Applications

  • Braking Systems (Antilock Brake Systems and Electronic Stability Control)
  • Electric Power Steering
  • HEV and EV Inverter Systems
  • Battery Management Systems
  • Active Driver Assistance Systems
  • Aerospace and Avionics
  • Railway Communications
  • Off-road Vehicles
  • Supports Defense, Aerospace, and Medical Applications
    • Controlled Baseline
    • One Assembly and Test Site
    • One Fabrication Site
    • Available in –55°C to 125°C Temperature Range
    • Extended Product Life Cycle
    • Extended Product-Change Notification
    • Product Traceability

1.3 Description

The TMS570LS3137-EP device is a high-performance microcontroller family for safety systems. The safety architecture includes the following:

  • Dual CPUs in lockstep
  • CPU and memory built-in self-test (BIST) logic
  • ECC on both the flash and the data SRAM
  • Parity on peripheral memories
  • Loopback capability on peripheral I/Os

The TMS570LS3137-EP device integrates the ARM Cortex-R4F Floating-Point CPU which offers an efficient 1.66 DMIPS/MHz, and has configurations which can run up to 180 MHz, providing up to 298 DMIPS. The device supports the word-invariant big-endian [BE32] format.

The TMS570LS3137-EP device has 3MB of integrated flash and 256KB of data RAM with single-bit error correction and double-bit error detection. The flash memory on this device is a nonvolatile, electrically erasable and programmable memory implemented with a 64-bit-wide data bus interface. The flash operates on a 3.3-V supply input (same level as I/O supply) for all read, program and erase operations. When in pipeline mode, the flash operates with a system clock frequency of up to 180 MHz. The SRAM supports single-cycle read and write accesses in byte, halfword, word and double-word modes.

The TMS570LS3137-EP device features peripherals for real-time control-based applications, including two Next Generation High-End Timer (N2HET) timing coprocessors and two 12-bit analog-to-digital converters (ADCs) supporting up to 24 inputs.

The N2HET is an advanced intelligent timer that provides sophisticated timing functions for real-time applications. The timer is software-controlled, using a reduced instruction set, with a specialized timer micromachine and an attached I/O port. The N2HET can be used for pulse-width-modulated outputs, capture or compare inputs, or GPIO. The N2HET is especially well suited for applications requiring multiple sensor information and drive actuators with complex and accurate time pulses. A High-End Timer Transfer Unit (HTU) can perform DMA-type transactions to transfer N2HET data to or from main memory. A Memory Protection Unit (MPU) is built into the HTU.

The device has two 12-bit-resolution MibADCs with 24 channels and 64 words of parity-protected buffer RAM each. The MibADC channels can be converted individually or can be grouped by software for sequential conversion sequences. Sixteen channels are shared between the two MibADCs. There are three separate groupings. Each sequence can be converted once when triggered or configured for continuous conversion mode.

The device has multiple communication interfaces: three MibSPIs, , one LIN, one SCI, three DCANs, one I2C. The SPIs provide a convenient method of serial high-speed communication between similar shift-register type devices. The LIN supports the Local Interconnect standard 2.0 and can be used as a UART in full-duplex mode using the standard Non-Return-to-Zero (NRZ) format.

The DCAN supports the CAN 2.0 (A and B) protocol standard and uses a serial, multimaster communication protocol that efficiently supports distributed real-time control with robust communication rates of up to 1 Mbps. The DCAN is ideal for systems operating in noisy and harsh environments (for example, automotive vehicle networking and industrial fieldbus) that require reliable serial communication or multiplexed wiring.

The I2C module is a multimaster communication module providing an interface between the microcontroller and an I2C-compatible device via the I2C serial bus. The I2C supports speeds of 100 and 400 Kbps.

The frequency-modulated phase-locked loop (FMPLL) clock module is used to multiply the external frequency reference to a higher frequency for internal use. There are two FMPLL modules on this device. These modules, when enabled, provide two of the seven possible clock source inputs to the global clock module (GCM). The GCM manages the mapping between the available clock sources and the device clock domains.

The device also has an external clock prescaler (ECP) module that when enabled, outputs a continuous external clock on the ECLK pin/ball. The ECLK frequency is a user-programmable ratio of the peripheral interface clock (VCLK) frequency. This low-frequency output can be monitored externally as an indicator of the device operating frequency.

The DMA controller has 16 channels, 32 control packets and parity protection on its memory. An MPU is built into the DMA to limit the DMA to prescribed areas of memory and to protect the rest of the memory system from any malfunction of the DMA.

The Error Signaling Module (ESM) monitors all device errors and determines whether an interrupt is generated or the external ERROR pin is toggled when a fault is detected. The ERROR pin can be monitored externally as an indicator of a fault condition in the microcontroller.

The External Memory Interface (EMIF) provides off-chip expansion capability with the ability to interface to synchronous DRAM (SDRAM) devices, asynchronous memories, peripherals or FPGA devices.

Several interfaces are implemented to enhance the debugging capabilities of application code. In addition to the built in ARM Cortex-R4F CoreSight debug features an External Trace Macrocell (ETM) provides instruction and data trace of program execution. For instrumentation purposes, a RAM Trace Port (RTP) module is implemented to support high-speed tracing of RAM and peripheral accesses by the CPU or any other master. A Data Modification Module (DMM) gives the ability to write external data into the device memory. Both the RTP and DMM have no or only minimum impact on the program execution time of the application code. A Parameter Overlay Module (POM) can reroute flash accesses to internal memory or to the EMIF. This rerouting allows parameters and tables to be dynamically calibrated against production code without rebuilding the code to explicitly access RAM or halting the processor to reprogram the data flash.

With integrated safety features and a wide choice of communication and control peripherals, the device is an ideal solution for high-performance real-time control applications with safety-critical requirements.

Table 1-1 Device Information(1)

ORDER NUMBER PACKAGE TA
TMS5703137CGWTQEP NFBGA (337) –40°C to 125°C
TMS5703137CGWTMEP –55°C to 125°C
(1) For more information, see Section 9, Mechanical Packaging and Orderable Information.

1.4 Functional Block Diagram

TMS570LS3137-EP fbd_f2_pns160.gifFigure 1-1 Functional Block Diagram