SBOSA90 November   2022 OPA4H199-SEP

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information for Quad Channel
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Protection Circuitry
      2. 7.3.2 EMI Rejection
      3. 7.3.3 Thermal Protection
      4. 7.3.4 Capacitive Load and Stability
      5. 7.3.5 Common-Mode Voltage Range
      6. 7.3.6 Phase Reversal Protection
      7. 7.3.7 Electrical Overstress
      8. 7.3.8 Overload Recovery
      9. 7.3.9 Typical Specifications and Distributions
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Low-Side Current Measurement
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 TINA-TI (Free Software Download)
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Radiation hardened
    • Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C
    • ELDRS free to 30 krad(Si)
    • Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si)
  • Supports defense, aerospace, and medical applications
    • Single controlled baseline
    • One fabrication, assembly and test site
    • Gold wire
    • NiPdAu lead finish
    • Available in military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Low offset voltage: ±125 µV
  • Low noise: 10.8 nV/√Hz at 1 kHz
  • High common-mode rejection: 130 dB
  • Low bias current: ±10 pA
  • Rail-to-rail input and output
  • Wide bandwidth: 4.5 MHz GBW
  • High slew rate: 21 V/µs
  • High capacitive load drive: 1 nF
  • MUX-friendly/comparator inputs
  • Low quiescent current: 560 µA per amplifier
  • Wide supply: ±1.35 V to ±20 V, 2.7 V to 40 V
  • Robust EMIRR performance: EMI/RFI filters on input and supply pins