SBOS741H
April 2017 – July 2022
INA180
,
INA2180
,
INA4180
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Device Comparison
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Typical Characteristics
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagrams
8.3
Feature Description
8.3.1
High Bandwidth and Slew Rate
8.3.2
Wide Input Common-Mode Voltage Range
8.3.3
Precise Low-Side Current Sensing
8.3.4
Rail-to-Rail Output Swing
8.4
Device Functional Modes
8.4.1
Normal Mode
8.4.2
Input Differential Overload
8.4.3
Shutdown Mode
9
Application and Implementation
9.1
Application Information
9.1.1
Basic Connections
9.1.2
RSENSE and Device Gain Selection
9.1.3
Signal Filtering
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.3
Application Curve
9.3
Power Supply Recommendations
9.3.1
Common-Mode Transients Greater Than 26 V
9.4
Layout
9.4.1
Layout Guidelines
9.4.2
Layout Examples
10
Device and Documentation Support
10.1
Documentation Support
10.1.1
Related Documentation
10.2
Receiving Notification of Documentation Updates
10.3
Support Resources
10.4
Trademarks
10.5
Electrostatic Discharge Caution
10.6
Glossary
Mechanical, Packaging, and Orderable Information
1
Features
Common-mode range (V
CM
): –0.2 V to +26 V
High bandwidth: 350 kHz (A1 devices)
Offset voltage:
±150 µV (maximum) at V
CM
= 0 V
±500 µV (maximum) at V
CM
= 12 V
Output slew rate: 2 V/µs
Accuracy:
±1% gain error (maximum)
1-µV/°C offset drift (maximum)
Gain options:
20 V/V (A1 devices)
50 V/V (A2 devices)
100 V/V (A3 devices)
200 V/V (A4 devices)
Quiescent current: 260 µA maximum
(INA180)