SLPS561 November   2015 CSD85302L

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YME|4
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Common Drain Configuration
  • Low On-Resistance
  • Small Footprint of 1.35 mm × 1.35 mm
  • Pb Free and Halogen Free
  • RoHS Compliant
  • ESD HBM Protection >2.5 kV

2 Applications

  • USB Type-C/PD
  • Battery Management
  • Battery Protection

3 Description

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.

Top View
CSD85302L Pin_Map.png
Configuration
CSD85302L Configuration.gif

Text added for spacing

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VS1S2 Source-to-Source Voltage 20 V
Qg Gate Charge Total (4.5 V) 6 nC
Qgd Gate Charge Gate-to-Drain 1.4 nC
RS1S2(on) Source-to-Source On-Resistance VGS = 2.5 V 29 mΩ
VGS = 4.5 V 20 mΩ
VGS = 6.5 V 18.7 mΩ
VGS(th) Threshold Voltage 0.9 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD85302L 3000 7-Inch Reel 1.35 × 1.35 mm Land Grid Array (LGA) Package Tape and Reel
CSD85302LT 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VS1S2 Source-to-Source Voltage 20 V
VGS Gate-to-Source Voltage ±10 V
IS Continuous Source Current(1) 7 A
ISM Pulsed Source Current(2) 37 A
PD Power Dissipation(1) 1.7 W
V(ESD) Human Body Model (HBM) 2.5 kV
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
  1. Typical RθJA = 75°C/W when mounted on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
  2. Max RθJA = 90°C/W, pulse duration ≤100 μs, duty cycle ≤1%

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RDS(on) vs VGS

CSD85302L D007_SLPS558.gif

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Gate Charge

CSD85302L D004_SLPS558_FP.gif