SLPS259A December   2011  – September 2015 CSD16415Q5

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Q5 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultralow Qg and Qgd
  • Very Low On-Resistance
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen-Free

2 Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
  • Optimized for Synchronous FET Applications

3 Description

This 25 V, 1.3 mΩ, 5 x 6 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View
CSD16415Q5 P0094-01_LPS200.gif

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Product Summary

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
Qg Gate Charge, Total (4.5 V) 21 nC
Qgd Gate Charge, Gate-to-Drain 5.2 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 1.5 mΩ
VGS = 10 V 0.99 mΩ
VGS(th) Threshold Voltage 1.5 V

Device Information(1)

DEVICE PACKAGE MEDIA QTY SHIP
CSD16415Q5 SON
5-mm × 6-mm
Plastic Package		 13-inch Reel 2500 Tape and Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage –12 to 16 V
ID Continuous Drain Current (Package Limited) 100 A
Continuous Drain Current (Silicon Limited), TC = 25°C(1) 261
Continuous Drain Current(1) 38
IDM Pulsed Drain Current, TA = 25°C(2) 200 A
PD Power dissipation(1) 3.2 W
Power Dissipation, , TC = 25°C 156
TJ,
Tstg 		Operating Junction and
Storage Temperature 		–55 to 150 °C
EAS Avalanche Energy, Single-Pulse
ID = 100 A, L = 0.1 mH, RG = 25 Ω		 500 mJ
(1) RθJA = 40°C/W on 1 in2 (6.45 cm2) Cu [2 oz. (0.071 mm thick)] on 0.060 inch (1.52 mm) thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(ON) vs VGS

CSD16415Q5 D007_SLPS259.gif

Gate Charge

CSD16415Q5 D004_SLPS259_FP.gif