SLOS846C September   2013  – December 2016 DRV8303

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Current Shunt Amplifier Characteristics
    7. 6.7 SPI Characteristics (Slave Mode Only)
    8. 6.8 Gate Timing and Protection Switching Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three-Phase Gate Driver
      2. 7.3.2 Current Shunt Amplifiers
      3. 7.3.3 Protection Features
        1. 7.3.3.1 Power Stage Protection
        2. 7.3.3.2 Overcurrent Protection (OCP) and Reporting
        3. 7.3.3.3 Undervoltage Protection (UVLO)
        4. 7.3.3.4 Overvoltage Protection (GVDD_OV)
        5. 7.3.3.5 Overtemperature Protection
        6. 7.3.3.6 Fault and Protection Handling
      4. 7.3.4 Start-Up and Shutdown Sequence Control
    4. 7.4 Device Functional Modes
      1. 7.4.1 EN_GATE
      2. 7.4.2 DTC
      3. 7.4.3 VDD_SPI
      4. 7.4.4 DC_CAL
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Read / Write Bit
      2. 7.6.2 Address Bits
      3. 7.6.3 SPI Data Bits
        1. 7.6.3.1 Status Registers
        2. 7.6.3.2 Control Registers
        3. 7.6.3.3 Overcurrent Adjustment
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Gate Driver Power-Up Sequencing Errata
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current Load
        2. 8.2.2.2 Overcurrent Protection Setup
        3. 8.2.2.3 Sense Amplifier Setup
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • 6-V to 60-V Operating Supply Voltage Range
  • 1.7-A Source and 2.3-A Sink Gate Drive Current Capability
  • Slew Rate Control for EMI Reduction
  • Bootstrap Gate Driver With 100% Duty Cycle Support
  • 6 or 3 PWM Input Modes
  • Dual Integrated Current-Shunt Amplifiers With Adjustable Gain and Offset
  • 3.3-V and 5-V Interface Support
  • Serial Peripheral Interface (SPI)
  • Protection Features:
    • Programmable Dead Time Control (DTC)
    • Programmable Overcurrent Protection (OCP)
    • PVDD and GVDD Undervoltage Lockout (UVLO)
    • GVDD Overvoltage Lockout (OVLO)
    • Overtemperature Warning/Shutdown (OTW/OTS)
    • Reported through nFAULT, nOCTW, and SPI Registers

2 Applications

  • 3-Phase BLDC and PMSM Motors
  • CPAP and Pump
  • E-Bikes
  • Power Tools
  • Robotics and RC Toys
  • Industrial Automation

3 Description

The DRV8303 is a gate driver IC for three-phase motor-drive applications. The device provides three half bridge drivers, each capable of driving two N-channel MOSFETs. The device supports up to 1.7-A source and 2.3-A peak current capability. The DRV8303 can operate off of a single power supply with a wide range from 6-V to 60-V. It uses a bootstrap gate-driver architecture with trickle charge circuitry to support 100% duty cycle. The DRV8303 uses automatic hand shaking when the high-side or low-side MOSFET is switching to prevent current shoot through. Integrated VDS sensing of the high-side and low-side MOSFETs is used to protect the external power stage against overcurrent conditions.

The DRV8303 includes two current-shunt amplifiers for accurate current measurement. The amplifiers support bi-directional current sensing and provide and adjustable output offset up to 3 V.

The serial peripheral interface (SPI) provides detailed fault reporting and flexible parameter settings such as gain options for the current-shunt amplifiers and slew-rate control of the gate drivers.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
DRV8303 TSSOP (48) 12.50 mm × 6.10 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

DRV8303 FBD_02_SLOS846.gif