SLPS427D October   2012  – September 2015 CSD17313Q2Q1

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Qualified for Automotive Applications
  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen-Free
  • SON 2-mm × 2-mm Plastic Package

2 Applications

  • DC-DC Converters
  • Battery and Load Management Applications

3 Description

This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Top View
CSD17313Q2Q1 P0108-01_LPS235.gif

Added text for spacing

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 2.1 nC
Qgd Gate Charge Gate-to-Drain 0.4 nC
RDS(on) Drain-to-Source On Resistance VGS = 3 V 31 mΩ
VGS = 4.5 V 26 mΩ
VGS = 8 V 24 mΩ
VGS(th) Threshold Voltage 1.3 V

Ordering Information(1)

PART NUMBER QTY MEDIA PACKAGE SHIP
CSD17313Q2Q1 3000 13-Inch Reel SON 2-mm × 2-mm Plastic Package Tape and Reel
CSD17313Q2Q1T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage +10 / –8 V
ID Continuous Drain Current (package limited) 5 A
Continuous Drain Current (silicon limited), TC = 25°C 19
Continuous Drain Current(1) 7.3
IDM Pulsed Drain Current, TA = 25°C(2) 57 A
PD Power Dissipation(1) 2.4 W
Power Dissipation, TC = 25°C 17
TJ, TSTG Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse,
ID = 19A, L = 0.1mH, RG = 25Ω		 18 mJ
  1. Typical RθJA = 53°C/W on a 1-inch2, 2-oz. Cu pad on a
    0.06-inch thick FR4 PCB.
  2. Max RθJC = 7.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%.

On State Resistance vs Gate to Source Voltage

CSD17313Q2Q1 D007_SLPS260.gif

Gate Charge

CSD17313Q2Q1 D004_SLPS260_FP.gif